Reconfigurable mmWave microchips with hBN switches on GaN developed

Researchers have created reconfigurable millimeter-wave microchips by co-integrating hexagonal boron nitride (hBN) switches onto gallium nitride (GaN) substrates. This breakthrough enables adaptive high-frequency circuits that can be tuned for different applications. It is important for advancing next-generation wireless communications, radar, and other mmWave technologies.

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